Semiconductor device

ABSTRACT

A liquid cooled semiconductor device is provided. The device includes a semiconductor die and a heat spreader. In one aspect of the invention, the heat spreader is mounted to a substrate such that a first side of the spreader is exposed on one side of the substrate and that a second side of the heat spreader is exposed on an opposing side of the substrate. Attached to a first side of the spreader is the semiconductor die. In another aspect of the invention, a wetting material is used to provide a thermal/electrical connection between the die and heat spreader. Sealant is provided between the die and the heat spreader to encapsulate and contain the wetting material.

RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.10/685,979, filed Oct. 15, 2003, the entire contents of which are hereinincorporated by reference.

BACKGROUND

1. Field of the Invention

The present invention generally relates to a system for dissipating heatfrom a power module. More specifically, the invention relates to asystem including a liquid cooled thermal stack for dissipating heat froma power module.

2. Description of Related Art

In high power electronic applications, such as electrical vehicleapplications, a significant amount of heat is generated in asemiconductor device that controls the switching of power. The heatadversely affects the performance and reliability of the device bycausing the device to overheat. When the device overheats, the junctiontemperature rises to a level where the device can fail to function. Inaddition, the devices and interconnects may also fail due to thermalexpansion effects causing solder joint cracking. Therefore, it isadvantageous to maximize in the device the capability to dissipate heatand to minimize the effects of thermal expansion.

One approach, as seen in FIG. 1, has been to use a direct bond copper(DBC) substrate. One example is illustrated by power module 10. Thepower module 10 includes a die 12, a DBC substrate 14, a heat spreader20, and water 30 for cooling. The die 12 is attached to the DBCsubstrate 14 by a solder layer 16. A wire bond 26 attaches the die 12 toa bond pad 28 on the DBC substrate 14. The DBC substrate includes threelayers, a top copper layer 15, followed by a middle aluminum nitridelayer 17, and a bottom, third copper layer 19. Provided as such, the DBCsubstrate 14 provides a solderable, dielectric substrate for the die 12.In addition, the aluminum nitride layer 17 is dielectric with acoefficient of thermal expansion (CTE) closely matched to the silicon ofthe die 12.

The DBC substrate 14 is attached to the heat spreader 20 by the solderlayer 18. Made of copper, the heat spreader 20 is attached to a layer ofthermal grease 22 to a cold plate 24.

Fluid 30 is directed to flow across the copper plate 24 to transport theheat away from the power module 10, the fluid 30 is directed by achannel 32 defined by a first wall 34 and a second wall 36. An aperture35 is formed in the first wall 34 of the channel 32 and the cold plate24 is attached to the first wall 34 over the aperture 35. Provided withthe aperture 35, the first wall 34 allows the water 30 to directlycontact the cold plate 24 and dissipate heat. To seal the water 30 inthe channel 32 a gasket 38 is provided between the first wall 34 and thecold plate 24.

Unfortunately, the DBC substrate 14 is not optimized for sinking heatfrom the die and may not provide optimal reliability. For example, thesolder and thermal grease interfaces 18 and 22 may increase the thermalresistance of the thermal stack. In addition, stress due to thermalexpansion mismatch of the copper with die 12 will be concentrated at thesolder interfaces, which may result in failures in the solder. Theadvantage in using the DBC substrate includes using the substrate tosupport the electronic circuit since it has dielectric properties.Disadvantages of DBC include cost, low thermal conductivity, anddifficulty of manufacturability.

In view of the above, it is apparent that there exists a need for animproved system for providing thermal dissipation of heat fromsemiconductor dies in high power electronic applications.

SUMMARY

In satisfying the above need, as well as overcoming the enumerateddrawbacks and other limitations of the related art, the presentinvention provides a system for dissipating heat from a semiconductordevice. The system generally includes a semiconductor die, a heatspreader, a wetting material, a sealant, a substrate, and a base.

As is typical thereof, the semiconductor die produces heat in normaloperation. To dissipate this heat, the semiconductor die is attached toa first side of the heat spreader. The wetting material, which may be aliquefiable solder, is used to provide a thermal connection between thedie and heat spreader. The sealant provides a mechanical connectionbetween the die and heat spreader, in addition to encapsulating thewetting material. The heat spreader is further attached to a substrateconfigured for fixing the location of the heat spreader. A second sideof the heat spreader is exposed from the substrate and configured toallow cooling fluid to flow thereacross transferring heat away from theheat spreader.

In other aspects, the substrate includes a plastic material and the heatspreader is insert molded into the plastic material for ease ofmanufacture. The heat spreader can also include copper to facilitateheat transfer. To prevent electrical shorting, the cooling fluid may bea dielectric fluid. Alternatively, the heat spreader may include aceramic dielectric coating sputtered on the second side of the heatspreader allowing an electrolizable fluid such as water to be used. Thefluid is directed to flow across the second side of the heat spreader bya channel. The channel is configured to contain the fluid and mayinclude a seal or gasket located between the channel and the substrate.

Further objects, features and advantages of this invention will becomereadily apparent to persons skilled in the art after a review of thefollowing description, with reference to the drawings and claims thatare appended to and form a part of this specification.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a power module used in high powerelectronic applications according to the prior art; and

FIG. 2 is a sectional view of a power module for high power electronicapplications according to the present invention.

DETAILED DESCRIPTION

Now referring to FIG. 2, a system embodying the principles of thepresent invention is illustrated therein and generally designated at 50.The system 50 includes as its principal components a semiconductor die52, wetting material 56, sealant 58, a heat spreader 54, a fluid 66 anda base 68.

The die 52 is attached to a copper heat spreader 54 without anintermediate dielectric layer. Attachment is made by means of a stressrelieving interconnect comprising a wetting material 56 and sealant 58.The wetting material 56 is a phase changing solder that provides anelectrical connection between the die 52 and the heat spreader 54, thatsoftens or liquefies during the thermal cycle thus relieving accumulatedstress. The sealant 58, which may include an encapsulant adhesivematerial and has suitable strength and thermal expansion properties toconfine the electrical interconnect material and provide mechanicalattachment between the die 52 and the heat spreader 54. The heatspreader 54 is fixed in place by the substrate 64. A wire bond 60attaches the die 52 to a bond pad 62 on the DBC substrate.

A side of the heat spreader 54 is exposed through an aperture in thesubstrate 64 allowing cooling fluid 66 to flow across the heat spreader54 and transport heat away from the power module 50. Due to thecontinuous electrical connection between the die 52 and the heatspreader 54, the fluid 66 may be a dielectric fluid to prevent shorts.Alternatively, a dielectric coating 76 may be applied to the exposedside of the heat spreader 54, providing electrical insulation betweenthe heat spreader 54 and the fluid 66. The coating 76 may be a ceramiccoating that is sputtered on the exposed side of the heat spreader. Useof the dielectric coating 76 allows an electrolizable fluid to be usedfor cooling the heat spreader 54, including water.

A base 68 with a first wall 70 and a second wall 72 forms a channelprovided for directing the flow of a cooling fluid 66. The first wall 70includes an aperture 73 where the substrate 64 is attached, thererbyallowing the fluid 66 to directly contact the heat spreader 54. The heatspreader 54 is exposed from a face of substrate 64 to the coolant pathof the cooling fluid 66.

Alternatively, the dielectric substrate 64 can be plastic allowing theheat spreaders to be insert molded at the desired locations, with onesurface exposed for die attach, and another surface exposed to thecoolant path. Provided between the first wall 70 and the substrate 64,the gasket 74 seals the fluid 66 in the base 68. Further, the substrate64 can form a portion of the channel that transports the fluid 66.

As a person skilled in the art will readily appreciate, the abovedescription is meant as an illustration of implementation of theprinciples this invention. This description is not intended to limit thescope or application of this invention in that the invention issusceptible to modification, variation and change, without departingfrom spirit of this invention, as defined in the following claims.

1. A semiconductor device comprising: a semiconductor die; a heatspreader having a first side and a second side, the first side beingattached to the semiconductor die; a wetting material providing athermal connection between the semiconductor die with the heat spreader;and a sealant extending between the semiconductor die and the heatspreader and encapsulating the wetting material.
 2. The device accordingto claim 1, wherein the wetting material is a liquefiable solder.
 3. Thedevice according to claim 1, wherein the heat spreader is constructedprimarily of copper.
 4. The device according to claim 1, wherein theheat spreader includes a dielectric coating on the second side of theheat spreader.
 5. The device according to claim 4, wherein the coatingis a ceramic coating.
 6. The device according to claim 1, furthercomprising a substrate to which the spreader is mounted, the spreaderbeing mounted to the substrate such that at least part of the secondside of the heat spreader is exposed from the substrate.
 7. Asemiconductor device comprising: a semiconductor die; a heat spreaderhaving a first and a second side, the first side being attached to thesemiconductor die; and a substrate for fixing the location of the heatspreader, the heat spreader being mounted to the substrate such that atleast a portion of the second side of the heat spreader is exposedthrough the substrate.
 8. The system according to claim 7, wherein thesubstrate comprises a plastic material.
 9. The system according to claim8, wherein the heat spreader is insert molded into the substrate suchthat the second side of the heat spreader is exposed from the substrate.10. The system according to claim 7, wherein the heat spreader is acopper heat spreader.
 11. The system according to claim 7, wherein theheat spreader includes a dielectric coating on the second side of theheat spreader.
 12. The system according to claim 11, wherein the coatingis a ceramic coating.
 13. The system according to claim 7, furthercomprising a base including wall portions defining a channel adapted tohaving cooling fluid flow through the channel, part of the wall portionsdefining an aperture and the substrate being mounted over the aperturesuch that the second side of the heat spreader will be contacted by aflow of the cooling fluid through the channel.